Full text loading...
Calculated thermal conductivity of SLL structure vs number of interfaces (N). The dashed line represents conventional chalcogenide materials. In the inset, the measured thermal conductivities of various chalcogenide materials are shown. The solid circles represent SLL structures with different number of interfaces (N).
Raman spectrum at 514nm for (a) GST , (b) SLL , (c) SLL , (d) SLL , and (e) SLL , respectively.
Temperature distribution of the neighbor PCM cell formed by (a) conventional chalcogenide material, (b) SLL structure. The “T” type area represents the phase change (PC) layer with a thickness of 50 nm and the feature size of the cell is 45 nm. The width of input current pulses is 50 ns while the amplitude is and for (a) and (b), respectively. So that their cells A can rise to the same temperature .
characteristics of PCM cells with GST and SLL structure. The SLL structure has the minimum thermal conductivity as measured. The inset shows the reset resistance as a function of pulse width for PCM cells with GST and SLL structure. The amplitude of the reset pulse is 5 V.
Article metrics loading...