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In situ strain relaxation comparison between GaAsBi and GaInAs grown by molecular-beam epitaxy
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10.1063/1.3562952
/content/aip/journal/apl/98/10/10.1063/1.3562952
http://aip.metastore.ingenta.com/content/aip/journal/apl/98/10/10.1063/1.3562952
/content/aip/journal/apl/98/10/10.1063/1.3562952
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/content/aip/journal/apl/98/10/10.1063/1.3562952
2011-03-10
2014-07-22
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: In situ strain relaxation comparison between GaAsBi and GaInAs grown by molecular-beam epitaxy
http://aip.metastore.ingenta.com/content/aip/journal/apl/98/10/10.1063/1.3562952
10.1063/1.3562952
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