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Very long wavelength quantum dot infrared photodetector using a modified dots-in-a-well structure with AlGaAs insertion layers
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10.1063/1.3563709
/content/aip/journal/apl/98/10/10.1063/1.3563709
http://aip.metastore.ingenta.com/content/aip/journal/apl/98/10/10.1063/1.3563709
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

PL spectra of samples with and without GaAs ILs for the dots grown on GaAs layer (top) and for DWELL structure (bottom).

Image of FIG. 2.
FIG. 2.

(a) is the photocurrent spectrum of the DWELL detector sample with two GaAs layers inserted measured under the normal incidence geometry at 77 K with bias voltage of 1.5 V and (b) is the schematical drawing of the detector structure. The inset of (a) is the proposed conduction band diagram.

Image of FIG. 3.
FIG. 3.

High resolution cross-sectional TEM image showing the dots of the DWELL detector sample with the GaAs ILs.

Image of FIG. 4.
FIG. 4.

(a) is the photocurrent spectra of the DWELL detector sample with two layers inserted measured at different forward bias voltages under the normal incidence geometry at 77 K and (b) is the dependence of the peak detectivity on the applied bias voltages at 77 K for the DWELL detector sample with layers. The inset of (a) is the proposed conduction band diagram denoting the involved transitions.

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/content/aip/journal/apl/98/10/10.1063/1.3563709
2011-03-10
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Very long wavelength quantum dot infrared photodetector using a modified dots-in-a-well structure with AlGaAs insertion layers
http://aip.metastore.ingenta.com/content/aip/journal/apl/98/10/10.1063/1.3563709
10.1063/1.3563709
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