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Effect of high-pressure oxygen annealing on negative bias illumination stress-induced instability of InGaZnO thin film transistors
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10.1063/1.3564882
/content/aip/journal/apl/98/10/10.1063/1.3564882
http://aip.metastore.ingenta.com/content/aip/journal/apl/98/10/10.1063/1.3564882
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Transfer characteristics of IGZO TFTs with a bottom gate and top contact structure for (a) device A (0.2 atm annealed), (b) device B (0.5 atm annealed), and (c) device C (10 atm annealed).

Image of FIG. 2.
FIG. 2.

Evolution of the transfer characteristics for the (a) device A, (b) device B, and (c) device C as a function of the NBIS time.

Image of FIG. 3.
FIG. 3.

Variation in (a) value and (b) SS value as a function of the applied NBIS time for the IGZO TFTs annealed at different pressure.

Image of FIG. 4.
FIG. 4.

XPS spectra for three IGZO thin films.

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/content/aip/journal/apl/98/10/10.1063/1.3564882
2011-03-10
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Effect of high-pressure oxygen annealing on negative bias illumination stress-induced instability of InGaZnO thin film transistors
http://aip.metastore.ingenta.com/content/aip/journal/apl/98/10/10.1063/1.3564882
10.1063/1.3564882
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