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Transfer characteristics of IGZO TFTs with a bottom gate and top contact structure for (a) device A (0.2 atm annealed), (b) device B (0.5 atm annealed), and (c) device C (10 atm annealed).
Evolution of the transfer characteristics for the (a) device A, (b) device B, and (c) device C as a function of the NBIS time.
Variation in (a) value and (b) SS value as a function of the applied NBIS time for the IGZO TFTs annealed at different pressure.
XPS spectra for three IGZO thin films.
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