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Material design for a magnetic semiconductor in spinel ferrites. Schematic illustration of the (a) structural and (b) spin configurations of the spinel ferrite. The number of carriers and spin states are adjustable by substituting atoms. (c) Valence band spectra in spinel ferrite film ( and 0.5).
Structural characterization of the multiferroic heterojunction. (a) Schematic illustration and (b) optical microscope image of the FET structure. The structure is back-gate type as top Au electrode and bottom electrode of a substrate. (c) XRD patterns of the ferrimagnetic /ferroelectric hetero junction on a substrate.
Electrical and electronic properties of the multiferroic heterojunction. (a) Bias voltage dependence of ferroelectric polarization of the gate layer ( curve). (b) Leakage current measurement of the gate layer ( curve). Excluding the inversion current, the leakage current is the picoampere order corresponding to several giga-ohm. (c) Gate voltage dependence of channel resistance of the layer ( curve). The voltage between source and drain was fixed at 2 V. The channel resistance was estimated by subtracting leakage current to minimize inversion current effect on channel current. The inset shows channel current curve before subtracting leakage current of .
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