1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Preparation of ferroelectric field effect transistor based on sustainable strongly correlated oxide semiconductor and their electrical transport properties
Rent:
Rent this article for
USD
10.1063/1.3564885
/content/aip/journal/apl/98/10/10.1063/1.3564885
http://aip.metastore.ingenta.com/content/aip/journal/apl/98/10/10.1063/1.3564885
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Material design for a magnetic semiconductor in spinel ferrites. Schematic illustration of the (a) structural and (b) spin configurations of the spinel ferrite. The number of carriers and spin states are adjustable by substituting atoms. (c) Valence band spectra in spinel ferrite film ( and 0.5).

Image of FIG. 2.
FIG. 2.

Structural characterization of the multiferroic heterojunction. (a) Schematic illustration and (b) optical microscope image of the FET structure. The structure is back-gate type as top Au electrode and bottom electrode of a substrate. (c) XRD patterns of the ferrimagnetic /ferroelectric hetero junction on a substrate.

Image of FIG. 3.
FIG. 3.

Electrical and electronic properties of the multiferroic heterojunction. (a) Bias voltage dependence of ferroelectric polarization of the gate layer ( curve). (b) Leakage current measurement of the gate layer ( curve). Excluding the inversion current, the leakage current is the picoampere order corresponding to several giga-ohm. (c) Gate voltage dependence of channel resistance of the layer ( curve). The voltage between source and drain was fixed at 2 V. The channel resistance was estimated by subtracting leakage current to minimize inversion current effect on channel current. The inset shows channel current curve before subtracting leakage current of .

Loading

Article metrics loading...

/content/aip/journal/apl/98/10/10.1063/1.3564885
2011-03-10
2014-04-19
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Preparation of ferroelectric field effect transistor based on sustainable strongly correlated (Fe,Zn)3O4 oxide semiconductor and their electrical transport properties
http://aip.metastore.ingenta.com/content/aip/journal/apl/98/10/10.1063/1.3564885
10.1063/1.3564885
SEARCH_EXPAND_ITEM