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Deep subnanosecond spin torque switching in magnetic tunnel junctions with combined in-plane and perpendicular polarizers
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10.1063/1.3565162
/content/aip/journal/apl/98/10/10.1063/1.3565162
http://aip.metastore.ingenta.com/content/aip/journal/apl/98/10/10.1063/1.3565162
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Figures

Image of FIG. 1.
FIG. 1.

(a) Schematic of the IST-RAM device consisting of a pinned in-plane synthetic antiferromagnetic polarizer and a CoFeB free layer. (b) OST-RAM device made by adding a perpendicular polarizer to the IST-RAM device. [(c) and (d)] Simulated macrospin trajectories of magnetizations starting near the direction in response to square pulses in (c) IST-RAM and (d) OST-RAM.

Image of FIG. 2.
FIG. 2.

(a) VSM measurement of an unpatterned OST-RAM multilayer for a magnetic field applied perpendicular to the plane. (b) Resistance of an OST-RAM device versus in-plane easy-axis magnetic field.

Image of FIG. 3.
FIG. 3.

Switching probability as a function of the applied voltage pulse duration and magnitude for (a) IST-RAM and (b) OST-RAM devices. Voltage labels for OST-RAM data are the values at 50% switching probability. Switching probability as a function of energy delivered to (c) IST-RAM and (d) OST-RAM devices.

Image of FIG. 4.
FIG. 4.

(a) Switching voltage for IST-RAM and OST-RAM devices plotted as a function of pulse width at 50% switching probability, . Solid lines are best fits described in the text. (b) Energy per write at 50% switching probability plotted as a function of switching time, .

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/content/aip/journal/apl/98/10/10.1063/1.3565162
2011-03-10
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Deep subnanosecond spin torque switching in magnetic tunnel junctions with combined in-plane and perpendicular polarizers
http://aip.metastore.ingenta.com/content/aip/journal/apl/98/10/10.1063/1.3565162
10.1063/1.3565162
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