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(a) Schematic of the IST-RAM device consisting of a pinned in-plane synthetic antiferromagnetic polarizer and a CoFeB free layer. (b) OST-RAM device made by adding a perpendicular polarizer to the IST-RAM device. [(c) and (d)] Simulated macrospin trajectories of magnetizations starting near the direction in response to square pulses in (c) IST-RAM and (d) OST-RAM.
(a) VSM measurement of an unpatterned OST-RAM multilayer for a magnetic field applied perpendicular to the plane. (b) Resistance of an OST-RAM device versus in-plane easy-axis magnetic field.
Switching probability as a function of the applied voltage pulse duration and magnitude for (a) IST-RAM and (b) OST-RAM devices. Voltage labels for OST-RAM data are the values at 50% switching probability. Switching probability as a function of energy delivered to (c) IST-RAM and (d) OST-RAM devices.
(a) Switching voltage for IST-RAM and OST-RAM devices plotted as a function of pulse width at 50% switching probability, . Solid lines are best fits described in the text. (b) Energy per write at 50% switching probability plotted as a function of switching time, .
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