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Evolution of , , , , and of RRAM with of as a function of dc switching cycles.
Dependence of RESET power on (a) SET power and (b) maximum SET power including the contribution from charge-dissipation current. Inset in (b) shows a typical HRS curve with increasing voltage dependence toward .
Measured and calculated dependence of on under dc cycling. The compliance currents of were set at (a) 1 mA, (b) , and (c) . was proportional to in region I, to in region II, and to in region III. Inset in (a) shows the schematic of the conical-shape filament. Material parameters used in the calculation were: , , , and .
[(a)–(f)] Selected curves of LRS and HRS with of in region I, region II, and the transition from region II to III. (g) Schematic of the evolution of the filament morphology. In region III, the smaller filament F2 became semiconductive and inactive during switching.
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