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Evolution of RESET current and filament morphology in low-power unipolar resistive switching memory
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View: Figures


Image of FIG. 1.
FIG. 1.

Evolution of , , , , and of RRAM with of as a function of dc switching cycles.

Image of FIG. 2.
FIG. 2.

Dependence of RESET power on (a) SET power and (b) maximum SET power including the contribution from charge-dissipation current. Inset in (b) shows a typical HRS curve with increasing voltage dependence toward .

Image of FIG. 3.
FIG. 3.

Measured and calculated dependence of on under dc cycling. The compliance currents of were set at (a) 1 mA, (b) , and (c) . was proportional to in region I, to in region II, and to in region III. Inset in (a) shows the schematic of the conical-shape filament. Material parameters used in the calculation were: , , , and .

Image of FIG. 4.
FIG. 4.

[(a)–(f)] Selected curves of LRS and HRS with of in region I, region II, and the transition from region II to III. (g) Schematic of the evolution of the filament morphology. In region III, the smaller filament F2 became semiconductive and inactive during switching.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Evolution of RESET current and filament morphology in low-power HfO2 unipolar resistive switching memory