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(a) Effective index of the single semiconductor on metal and semiconductor on silica wires as a function of the waveguide width, , for . Dashed horizontal lines mark (from bottom to top) the refractive indices of air, glass, and semiconductor, respectively. (b) Loss (dashed line) length in a single waveguide on metal substrate as a function of the waveguide width, . Coupling length (full line) for two coupled waveguides as a function of the separation distance, , and .
(a) Nonlinear parameter and (b) as a function of , calculated for several widths and .
Evolution of in a single waveguide with and . (a) is the linear regime and (b) is the nonlinear one (with ). (c) shows the nonlinear phase shift as a function of , the slope of the straight line gives and the dashed vertical line marks .
Evolution of in the three waveguides array for the edge excitation case in the (a) linear and (b) nonlinear regimes. The isosurfaces enclose the volume inside the semiconductor where . Distances shown are measured in microns. Array dimensions are , , and .
The same as Fig. 4 but when the input is sent into the central waveguide.
Variations in the power flow in the semiconductor wires with propagation distance corresponding to Figs. 4(a) and 4(b), respectively.
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