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Peak PL intensity for nominally identical PL structures, shown schematically in the inset, grown with varying proximity to a layer of ErAs nanoparticles. A control sample was grown without an ErAs nanoparticle layer for each thickness. The erbium cell temperature was maintained at the growth temperature throughout the growth of each sample.
Erbium depth profile measured by SIMS, for the PL sample grown 5 nm from an ErAs nanoparticle layer. Note that (i) there is an accumulation of erbium during thermal removal of native oxide at substrate/epi interface and (ii) that the parasitic erbium incorporation decreased by immediately following the ErAs nanoparticle layer.
Peak PL intensity for nominally identical PL structures, grown with varying erbium cell temperature. PL intensity degraded in proportion to the erbium flux, over a temperature range between 800 and .
Peak PL intensity for samples grown with varying GaAs spacer thickness between the ErAs nanoparticle layers and the location of the growth interruption. The inset shows the PL spectra for the control, 1 and 10 nm spacer thicknesses. The sample grown with a 1 nm GaAs spacer thickness exhibited PL intensity comparable to samples grown with erbium cell held at idle temperature throughout growth. The sample grown with 10 nm GaAs spacer is scaled by 100× and exhibit severely degraded PL intensity.
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