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Stable high conductive amorphous InGaZnO driven by hydrogenation using hot isostatic pressing
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10.1063/1.3567635
/content/aip/journal/apl/98/12/10.1063/1.3567635
http://aip.metastore.ingenta.com/content/aip/journal/apl/98/12/10.1063/1.3567635
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Changes in (a) carrier concentration and mobility, (b) XRD patterns (the peaks marked with asterisks correspond to indium cluster), (c) BE of determined by XPS, and (d) optical transmittance of a-IGZO thin films before and after hydrogen plasma treatment.

Image of FIG. 2.
FIG. 2.

(a) SIMS depth profiles of hydrogen in as-grown a-IGZO (IGZO), a-IGZO hydrogenated by the HIP treatment (IGZO-HIP), and a-IGZO annealed in an oxygen atmosphere after hydrogenation (IGZO-HIP-O). (b) Optical transmittances of IGZO, IGZO-HIP, and IGZO-HIP-O.

Image of FIG. 3.
FIG. 3.

Changes in (a) BEs of , , , and and (b) electrical characteristics of as-grown a-IGZO (A), HIP treated a-IGZO at 1000, 100, and 10 bar (B, C, and D, respectively), and a-IGZO annealed in an oxygen atmosphere after hydrogenation at 1000, 100, and 10 bar (, , and , respectively).

Image of FIG. 4.
FIG. 4.

Changes in (a) and (b) at room temperature of hydrogenated a-IGZO under various pressures at , and those of oxygen annealed a-IGZO at before and after hydrogenation. The arrows at the top indicate the sequence of the hydrogen injection and removal process.

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/content/aip/journal/apl/98/12/10.1063/1.3567635
2011-03-24
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Stable high conductive amorphous InGaZnO driven by hydrogenation using hot isostatic pressing
http://aip.metastore.ingenta.com/content/aip/journal/apl/98/12/10.1063/1.3567635
10.1063/1.3567635
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