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Changes in (a) carrier concentration and mobility, (b) XRD patterns (the peaks marked with asterisks correspond to indium cluster), (c) BE of determined by XPS, and (d) optical transmittance of a-IGZO thin films before and after hydrogen plasma treatment.
(a) SIMS depth profiles of hydrogen in as-grown a-IGZO (IGZO), a-IGZO hydrogenated by the HIP treatment (IGZO-HIP), and a-IGZO annealed in an oxygen atmosphere after hydrogenation (IGZO-HIP-O). (b) Optical transmittances of IGZO, IGZO-HIP, and IGZO-HIP-O.
Changes in (a) BEs of , , , and and (b) electrical characteristics of as-grown a-IGZO (A), HIP treated a-IGZO at 1000, 100, and 10 bar (B, C, and D, respectively), and a-IGZO annealed in an oxygen atmosphere after hydrogenation at 1000, 100, and 10 bar (, , and , respectively).
Changes in (a) and (b) at room temperature of hydrogenated a-IGZO under various pressures at , and those of oxygen annealed a-IGZO at before and after hydrogenation. The arrows at the top indicate the sequence of the hydrogen injection and removal process.
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