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Schematics illustrating sample structures and how they were modeled. (a) presents a sample structure after pulsed laser melting, where X is the chalcogen species. (b) shows how samples such as the one in (a) were modeled in fitting ellipsometry data. (c) shows a thinned sample. (d) shows how samples such as the one in (c) were modeled in fitting transmission data with “average” layers serving as a model of rough interfaces.
Experimental SIMS profiles (dots) of S, Se, and Te in SOI samples after implantation to a dose of followed by pulsed laser melting vs the profiles (solid lines) used for fitting the ellipsometry data. The first 5 nm of data were excluded because they were visibly affected by surface transients.
The optical absorption coefficient of chalcogen-rich silicon, as measured by ellipsometry and reckoned in the region modeled as uniform. The data are compared with those obtained in the same manner from an untreated SOI sample and the literature data on the absorption coefficient of silicon from Ref. 16. A difference of roughly between the measurement of an untreated SOI sample and the literature data near 1050 nm is not shown in the plot. The range of absorption coefficients measured less precisely in Ref. 7 for samples with S concentrations between 1.2 and (comparable to the samples measured in this work) is also shown.
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