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Low-voltage ZnO thin-film transistors based on and high- dielectrics deposited by spray pyrolysis in air
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10.1063/1.3568893
/content/aip/journal/apl/98/12/10.1063/1.3568893
http://aip.metastore.ingenta.com/content/aip/journal/apl/98/12/10.1063/1.3568893
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

AFM topography images of; (a) spray pyrolysed and dielectrics on ITO/glass substrates and (b) ZnO deposited by spray pyrolysis on and .

Image of FIG. 2.
FIG. 2.

(a) Tauc plots for the and films deposited by spray pyrolysis on quartz substrates. (b) Transmission spectra of the and structures.

Image of FIG. 3.
FIG. 3.

(a) Capacitance (left ordinate symbols) and dissipation factor (right ordinate solid lines) in the frequency range between 100 Hz and 10 MHz and (b) Nyquist plots of spray pyrolysis deposited and layers sandwiched between ITO and Au electrodes. The effective area of the capacitor used was .

Image of FIG. 4.
FIG. 4.

Linear and saturated transfer characteristics of a bottom-gate, top-contact ZnO TFT (, ) based on (a) gate dielectric and (b) gate dielectric deposited by spray pyrolysis. Insets: schematics of the transistor architectures employed.

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/content/aip/journal/apl/98/12/10.1063/1.3568893
2011-03-22
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Low-voltage ZnO thin-film transistors based on Y2O3 and Al2O3 high-k dielectrics deposited by spray pyrolysis in air
http://aip.metastore.ingenta.com/content/aip/journal/apl/98/12/10.1063/1.3568893
10.1063/1.3568893
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