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AFM topography images of; (a) spray pyrolysed and dielectrics on ITO/glass substrates and (b) ZnO deposited by spray pyrolysis on and .
(a) Tauc plots for the and films deposited by spray pyrolysis on quartz substrates. (b) Transmission spectra of the and structures.
(a) Capacitance (left ordinate symbols) and dissipation factor (right ordinate solid lines) in the frequency range between 100 Hz and 10 MHz and (b) Nyquist plots of spray pyrolysis deposited and layers sandwiched between ITO and Au electrodes. The effective area of the capacitor used was .
Linear and saturated transfer characteristics of a bottom-gate, top-contact ZnO TFT (, ) based on (a) gate dielectric and (b) gate dielectric deposited by spray pyrolysis. Insets: schematics of the transistor architectures employed.
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