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Nano-Schottky barrier diodes based on Sb-doped ZnS nanoribbons with controlled p-type conductivity
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10.1063/1.3569590
/content/aip/journal/apl/98/12/10.1063/1.3569590
http://aip.metastore.ingenta.com/content/aip/journal/apl/98/12/10.1063/1.3569590
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Figures

Image of FIG. 1.
FIG. 1.

Characterizations of the ZnS:Sb NRs (a) SEM image. (b) EDS spectrum. (c) HRTEM image. Inset shows the corresponding SAED pattern. (d) XRD pattern. (e) XPS spectrum. Inset shows two peaks at 530.4 eV and 539.9 eV, corresponding to and , respectively.

Image of FIG. 2.
FIG. 2.

(a) Schematic illustration of the back-gate nanoFET based on the ZnS:Sb NR. (b) Typical curves of both the undoped and Sb-doped NRs. Inset shows the SEM image of the device. (c) and (d) are electrical transfer characteristics of sample 2 and sample 3, respectively. curves were plotted at varied . Insets show the curves at .

Image of FIG. 3.
FIG. 3.

(a) Schematic illustration of the nanoSBD based on the ZnS:Sb NR. (b) SEM image of the nanoSBD with artificial colors. (c) curve measured between two adjacent Au electrodes. (d) Rectifying characteristics of five different nanoSBDs, which are marked from SBD 1 to SBD 5. Inset shows the semilog plots of the rectifying curves. (e) curve of SBD 1. The series resistance is estimated by linearly fitting the data. (f) Semilog curves of the SBD 1 with and without correction at forward bias.

Image of FIG. 4.
FIG. 4.

Photoresponse of the nanoSBD. (a) Device characteristics measured in dark and under UV light illumination, respectively. (b) Photoresponse at reverse bias. Insets in (a) and (b) show the time response of the device at forward bias and reverse bias (−1 V), respectively.

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/content/aip/journal/apl/98/12/10.1063/1.3569590
2011-03-25
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Nano-Schottky barrier diodes based on Sb-doped ZnS nanoribbons with controlled p-type conductivity
http://aip.metastore.ingenta.com/content/aip/journal/apl/98/12/10.1063/1.3569590
10.1063/1.3569590
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