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The phase graph of QW with relaxed barrier layers.
The band structure of a fully strained QW with relaxed barrier layers.
TE model optical gain for the fully strained QWs.
Band structure parameters for GaAs, GaP, and GaN at 300 K (Ref. 11).
The BAC parameters for GaAsN and GaPN at 300 K (Ref. 12).
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