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Band structures and optical gain of strained quantum wells
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10.1063/1.3570630
/content/aip/journal/apl/98/12/10.1063/1.3570630
http://aip.metastore.ingenta.com/content/aip/journal/apl/98/12/10.1063/1.3570630

Figures

Image of FIG. 1.
FIG. 1.

The phase graph of QW with relaxed barrier layers.

Image of FIG. 2.
FIG. 2.

The band structure of a fully strained QW with relaxed barrier layers.

Image of FIG. 3.
FIG. 3.

TE model optical gain for the fully strained QWs.

Tables

Generic image for table
Table I.

Band structure parameters for GaAs, GaP, and GaN at 300 K (Ref. 11).

Generic image for table
Table II.

The BAC parameters for GaAsN and GaPN at 300 K (Ref. 12).

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/content/aip/journal/apl/98/12/10.1063/1.3570630
2011-03-24
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Band structures and optical gain of strained GaAsxP1−x−yNy/GaP quantum wells
http://aip.metastore.ingenta.com/content/aip/journal/apl/98/12/10.1063/1.3570630
10.1063/1.3570630
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