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(a) Nanogap device overview, (b) nanogap before Zn/Ni metal evaporation, (c) after Zn/Ni metal evaporation on the gap followed by thermal oxidation to convert Zn film to ZnO film, and (d) cross-sectional view of the nanogap device. The gap is filled with ZnO. When a bias is applied to the gap, photons are emitted from the ZnO between the gap.
XRD data of the thermally oxidized Zn film. The data show ZnO diffraction peaks confirming conversion of Zn film to ZnO film.
EL at bias from the LSNZD between the gap. (a) Spectrum from the LSNZD between the naogap. Applied bias is . (b) and (c) Insets are close-up view of the gap to show the visual light emission. The cross-sectional view (arrow in the inset) of the device is shown in Fig. 1(d).
A M-S-M model fit of a measured curve from the LSNZD. Detectable visual light (Fig. 3) has been observed at a bias voltage of 25 V.
A M-S-M model of the LSNZD. Energy band diagram of Ni–ZnO–Ni under a DC bias. The left junction is reverse biased and the right junction is forward biased. At , two electron transports are possible: thermionic emission and thermionic field emission (TFE). In TFE, electron-hole pairs can be generated by impact ionization. At , holes from metal are injected. In both cases, light emission occurs. EL from the hole injection is dominant until the space-charge-limited effect occurs.
Measured light intensity from a LSNZD. The inset shows photon counts per second.
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