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THz-TDS system using a tunable OPO to generate and detect THz radiation using PC Fe–InGaAs emitters and detectors at 1550 nm.
(a) Time-domain and (b) frequency-domain spectra of the THz signals detected by Fe–InGaAs PC detectors excited with 5 mW probe laser power at a 1550 nm excitation wavelength, for a ±60 V bias and 50 mW pump power applied to the emitter. In (a), the traces for wafers and have been vertically offset by and , respectively, for clarity. Inset to (b): the photocurrent generated from the detectors when excited with 5 mW laser at 1550 nm, as a function of applied dc bias voltage.
THz peak amplitude from Fe–InGaAs PC detectors measured as a function of (a) the emitter bias voltage using 50 mW pump power and (b) the emitter pump power, using a ±60 V emitter bias. In both bases the probe power was 5 mW.
(a) Frequency spectrum and (inset) the time-domain signal of the THz signal detected by an Fe–InGaAs PC detector using 5 mW probe power at 800 nm. (b) Main figure: the frequency spectrum, and (upper inset) the time-domain signal of the THz signal detected by LT-GaAs PC detector using 50 mW probe power at 800 nm. Bottom inset: the photocurrent generated from the Fe–InGaAs (solid) and LT-GaAs (dotted) detectors when excited with 5 mW laser power at 800 nm as a function of applied voltage.
(a) Time-domain signals (vertically offset by intervals for clarity) detected by a Fe–InGaAs PC detector, at different probe powers, at 800 nm and (b) the corresponding SNR and THz peak amplitudes. The emitters were biased at ±60 V, and pumped with 5 mW laser power.
Layer structure of the Fe–InGaAs wafers used in this study.
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