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Influences of surface reconstruction on the atomic-layer-deposited metal-oxide-semiconductor capacitors
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10.1063/1.3571293
/content/aip/journal/apl/98/12/10.1063/1.3571293
http://aip.metastore.ingenta.com/content/aip/journal/apl/98/12/10.1063/1.3571293
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) The ideal top view of surface construction for first type substrate and (b) the RHEED patterns of reconstructed surface at of (a). (c) The top view of surface reconstruction of second type substrate confirmed by RHEED patterns in (d).

Image of FIG. 2.
FIG. 2.

Cross-sectional HRTEM images of ALD- films grown on the TMA-pretreated - and -surface samples. The images show the thicknesses of are around 6.4 nm and 6.6 nm, respectively.

Image of FIG. 3.
FIG. 3.

Electrical characteristics of MOSCAPs. (a) Current density versus gate bias voltage and (b) multiple frequencies curves with hysteresis characteristics on - and -surface substrates.

Image of FIG. 4.
FIG. 4.

XPS core-level spectra of subjected to - and -surface substrates with the inset showing no significant difference between the signals of these two kinds of orientations in spectra.

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/content/aip/journal/apl/98/12/10.1063/1.3571293
2011-03-24
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Influences of surface reconstruction on the atomic-layer-deposited HfO2/Al2O3/n-InAs metal-oxide-semiconductor capacitors
http://aip.metastore.ingenta.com/content/aip/journal/apl/98/12/10.1063/1.3571293
10.1063/1.3571293
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