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The effect of trimethylgallium flows in the AlInGaN barrier on optoelectronic characteristics of near ultraviolet light-emitting diodes grown by atmospheric pressure metalorganic vapor phase epitaxy
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10.1063/1.3571440
/content/aip/journal/apl/98/12/10.1063/1.3571440
http://aip.metastore.ingenta.com/content/aip/journal/apl/98/12/10.1063/1.3571440
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

scan spectra of AlInGaN-GaN heterostructure in the (0004) reflection.

Image of FIG. 2.
FIG. 2.

EL spectra of these three AlInGaN/InGaN LEDs and reference GaN/InGaN LED at various current injection levels.

Image of FIG. 3.
FIG. 3.

L-I-V characteristics of these four fabricated LEDs.

Image of FIG. 4.
FIG. 4.

(a) The calculated EL spectra and (b) conduction band diagram of these four LEDs at 100 mA current injection. The inset of Fig. 4(b) shows the vertical electron current density profiles near the active regions.

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/content/aip/journal/apl/98/12/10.1063/1.3571440
2011-03-24
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: The effect of trimethylgallium flows in the AlInGaN barrier on optoelectronic characteristics of near ultraviolet light-emitting diodes grown by atmospheric pressure metalorganic vapor phase epitaxy
http://aip.metastore.ingenta.com/content/aip/journal/apl/98/12/10.1063/1.3571440
10.1063/1.3571440
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