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Direct observation of N-(group V) bonding defects in dilute nitride semiconductors using hard x-ray photoelectron spectroscopy
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10.1063/1.3573789
/content/aip/journal/apl/98/12/10.1063/1.3573789
http://aip.metastore.ingenta.com/content/aip/journal/apl/98/12/10.1063/1.3573789
/content/aip/journal/apl/98/12/10.1063/1.3573789
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/content/aip/journal/apl/98/12/10.1063/1.3573789
2011-03-25
2014-10-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Direct observation of N-(group V) bonding defects in dilute nitride semiconductors using hard x-ray photoelectron spectroscopy
http://aip.metastore.ingenta.com/content/aip/journal/apl/98/12/10.1063/1.3573789
10.1063/1.3573789
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