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CL spectra of GaN/AlGaN, GaN, and GaN/InGaN nanowires. Spectra were taken at room temperature with electron beam energy of 20 keV. Note that the intensity is on a logarithmic scale.
Topography (left) and near field optical intensity (right) images during e-beam excitation of a GaN nanowire.
Luminescence intensity as a function of position for GaN/AlGaN (●), GaN (◼), and GaN/InGaN (▲) nanowires. All nanowires are of diameter .
300 K minority carrier diffusion lengths for GaN/AlGaN, GaN, and GaN/InGaN wires.
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