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Transport imaging for contact-free measurements of minority carrier diffusion in GaN, GaN/AlGaN, and GaN/InGaN core-shell nanowires
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10.1063/1.3573832
/content/aip/journal/apl/98/13/10.1063/1.3573832
http://aip.metastore.ingenta.com/content/aip/journal/apl/98/13/10.1063/1.3573832

Figures

Image of FIG. 1.
FIG. 1.

CL spectra of GaN/AlGaN, GaN, and GaN/InGaN nanowires. Spectra were taken at room temperature with electron beam energy of 20 keV. Note that the intensity is on a logarithmic scale.

Image of FIG. 2.
FIG. 2.

Topography (left) and near field optical intensity (right) images during e-beam excitation of a GaN nanowire.

Image of FIG. 3.
FIG. 3.

Luminescence intensity as a function of position for GaN/AlGaN (●), GaN (◼), and GaN/InGaN (▲) nanowires. All nanowires are of diameter .

Tables

Generic image for table
Table I.

300 K minority carrier diffusion lengths for GaN/AlGaN, GaN, and GaN/InGaN wires.

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/content/aip/journal/apl/98/13/10.1063/1.3573832
2011-03-30
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Transport imaging for contact-free measurements of minority carrier diffusion in GaN, GaN/AlGaN, and GaN/InGaN core-shell nanowires
http://aip.metastore.ingenta.com/content/aip/journal/apl/98/13/10.1063/1.3573832
10.1063/1.3573832
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