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Measurements and microscopic model of quantum capacitance in graphene
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View: Figures


Image of FIG. 1.
FIG. 1.

(a) Diagram showing the geometry of a graphene MOS structure, where a graphene- capacitor lies on a substrate. (b) Optical image showing an as fabricated device and experimental set up for measurements. The graphene channel is in the dashed frame indicated by the black arrow. The channel area covered by top gate electrode is . The separation between source/drain electrodes to the top gate electrode is . (c) Total gate capacitance of the as fabricated graphene FET. Inset: gate leakage current density as a function of gate voltage. (d) Quantum capacitance of graphene extracted from (c). The dashed line is the theoretical value of quantum capacitance of graphene at 300K with a Fermi velocity .

Image of FIG. 2.
FIG. 2.

Microscopic capacitance model and fits of the experiment data. (a) Illustration of the key assumption of the model: local voltage fluctuating in the graphene plane around a gate induced channel potential. (b) Calculated quantum capacitance of graphene with different fluctuation levels which varies from 0 to 120 mV with step of 30 mV from bottom to top. Inset: carrier density fluctuation as a function of . The solid line is the numerical result and the dots are the results of Eq. (8). Best fits of the experiment data with (c) a single fitting parameter for quantum capacitance and (d) another device with small fluctuation .


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Measurements and microscopic model of quantum capacitance in graphene