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The dielectric suppress and the control of semiconductor non-Ohmic feature of by means of tin doping
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10.1063/1.3574016
/content/aip/journal/apl/98/13/10.1063/1.3574016
http://aip.metastore.ingenta.com/content/aip/journal/apl/98/13/10.1063/1.3574016
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) CCTO and (b) CCTO-Sn micrographs exhibiting the grain grow inhibition with addition. Inlay: the x-ray diffractions patterns of the sintered samples.

Image of FIG. 2.
FIG. 2.

Sn addition into a CCTO system (a) increased grain’s and grain’s boundary resistances, (b) improved non-Ohmic behavior, and (c) suppressed dielectric relaxation process in high frequency.

Image of FIG. 3.
FIG. 3.

The high frequency relaxation peak in plot disappeared when some Sn atoms replaced Ti atoms in the CCTO system. Note that the real capacitance value diminished in the absence of this peak. Below each graph there is a figure that ascribes the atomic structure of CCTO and CCTO-Sn systems and the electrical properties of a CCTO system caused by planar defect.

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/content/aip/journal/apl/98/13/10.1063/1.3574016
2011-03-31
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: The dielectric suppress and the control of semiconductor non-Ohmic feature of CaCu3Ti4O12 by means of tin doping
http://aip.metastore.ingenta.com/content/aip/journal/apl/98/13/10.1063/1.3574016
10.1063/1.3574016
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