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Direct determination of the band alignment at the (Zn,Mg)O/CISSe interface
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10.1063/1.3565972
/content/aip/journal/apl/98/14/10.1063/1.3565972
http://aip.metastore.ingenta.com/content/aip/journal/apl/98/14/10.1063/1.3565972
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Figures

Image of FIG. 1.
FIG. 1.

UPS and IPES data of the CISSe surface and sputter deposited layers with , , and . The positions of CBM and VBM are found by linear extrapolation of the onset, as shown by the gray lines. To correct for the IBB the spectra of the layers were preliminarily shifted along the energy axis as indicated by the big arrows containing the respective values. For a direct comparison the ZnO spectra are repeatedly plotted (dashed lines).

Image of FIG. 2.
FIG. 2.

Top: schematics of the conduction band alignment at the (Zn,Mg)O/CISSe interface as a function of Mg-content. The solid lines correspond to the positions of CBM and VBM of the pure CISSe surface. Arrows and dashed lines indicate the band gap increase caused by formation of ZnS/ZnSe. Bottom: solar cell parameters as a function of Mg-content x of the (Zn,Mg)O buffer layer. The increase in efficiency is caused by the enhancement of and FF.

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/content/aip/journal/apl/98/14/10.1063/1.3565972
2011-04-06
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Direct determination of the band alignment at the (Zn,Mg)O/CISSe interface
http://aip.metastore.ingenta.com/content/aip/journal/apl/98/14/10.1063/1.3565972
10.1063/1.3565972
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