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Effect of impurities on thermal stability of pseudomorphically strained Si:C layer
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10.1063/1.3572339
/content/aip/journal/apl/98/14/10.1063/1.3572339
http://aip.metastore.ingenta.com/content/aip/journal/apl/98/14/10.1063/1.3572339
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) Left and right column: HRXRD rocking curves along (004) and their respective kinematic simulations for CP and C sample postannealed at various temperatures. (b) Effective evolution of C and CP samples under postannealing for both near surface and bulk regions, the data points are shown as references. Inset shows the C and P as-implanted profiles as simulated by stopping and range of ion in matters (SRIM) program.

Image of FIG. 2.
FIG. 2.

(a) Left and right column shows the differential absorbance of CP and CP samples treated by various postannealing conditions. LVM, stretched complex and -SiC peaks are identified. (b) The change in LVM full width at half maximum and intensity for various treated C and CP samples, the data points are shown as references. Inset shows the peak fitting of original FTIR signal. LVM is identified at along with a dicarbon peak at .

Image of FIG. 3.
FIG. 3.

(a) The left and right column show the Si–O bond absorption peak at as measured by FTIR for CP and C sample, respectively. (b) The relative strain relaxation with respect to SPER formed undoped and doped Si:C strained layer. Normalized Si–O bond absorbance is plotted as comparison. (c) Differential strain relaxation curves show almost the same activation energy for near surface and bulk region in C sample while deviation in the two regions for CP case.

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/content/aip/journal/apl/98/14/10.1063/1.3572339
2011-04-07
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Effect of impurities on thermal stability of pseudomorphically strained Si:C layer
http://aip.metastore.ingenta.com/content/aip/journal/apl/98/14/10.1063/1.3572339
10.1063/1.3572339
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