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(a) Time-resolved reflectivity in n-type Si, intrinsic Si, and p-type Si. The carrier concentrations for the n-type and p-type Si were and , respectively. The pump laser intensity was . (b) Power spectra of oscillatory signals in Fig. 1(a). Broken, solid, and dotted lines correspond to power spectra for n-type Si, intrinsic Si, and n-type Si. The inset shows an energy diagram for n-type Si. shows the Fermi level, which rises with n-type doping. HH and LH stand for heavy-hole band and light-hole band, respectively.
(a) The phonon frequency and (b) the dephasing time are plotted as a function of doped carrier concentrations. Triangles and circles correspond to the results for n-type and p-type Si, respectively. The dotted line shows the result for intrinsic Si. The insets show the power dependences of (a) the phonon frequency and (b) dephasing time for intrinsic Si (triangles), n-type Si (squares), and p-type Si (circles). The doped carrier concentrations for the n-type and p-type Si were and , respectively.
Phonon frequency and decay time for intrinsic Si, n-type Si, and p-type Si. is the carrier concentration for doped Si. The pump intensity was . and are the phonon frequency and dephasing time by the Raman measurements. is obtained via , where is the Raman linewidth and c is the speed of light.
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