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Spontaneous formation of highly regular superlattice structure in InGaN epilayers grown by molecular beam epitaxy
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10.1063/1.3574607
/content/aip/journal/apl/98/14/10.1063/1.3574607
http://aip.metastore.ingenta.com/content/aip/journal/apl/98/14/10.1063/1.3574607
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Bright-field cross-sectional TEM images of the films grown at growth rates of (a) 1.0 Å/s and (b) 3.6 Å/s, taken along the projection with .

Image of FIG. 2.
FIG. 2.

(a) Magnified TEM image for the film grown at 3.6 Å/s, showing the formation of periodic SL structure. (b) High resolution TEM image for the SL structure.

Image of FIG. 3.
FIG. 3.

(a) SAD pattern recorded from the GaN buffer. (b) SAD pattern recorded from the film grown at 3.6 Å/s, showing the SL spots with weaker intensity.

Image of FIG. 4.
FIG. 4.

High resolution XRD scans of the (0002) reflection of the films grown at growth rates of (a) 1.0 Å/s, and (b) 3.6 Å/s.

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/content/aip/journal/apl/98/14/10.1063/1.3574607
2011-04-05
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Spontaneous formation of highly regular superlattice structure in InGaN epilayers grown by molecular beam epitaxy
http://aip.metastore.ingenta.com/content/aip/journal/apl/98/14/10.1063/1.3574607
10.1063/1.3574607
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