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Ohmic contact between ZnO and Pt by InSb layer in a ZnO Schottky diode
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10.1063/1.3574933
/content/aip/journal/apl/98/14/10.1063/1.3574933
http://aip.metastore.ingenta.com/content/aip/journal/apl/98/14/10.1063/1.3574933
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Measurement results of the ZnO thin film on silicon substrate using rf magnetron sputtering system. [(a) and (b)] FESEM, (c) AFM, (d) XRD, and (e) RBS.

Image of FIG. 2.
FIG. 2.

Work function and TEM images of InSb thin layer (, , and ).

Image of FIG. 3.
FIG. 3.

Fabrication of the Schottky diode and work function measurement in patterned InSb-deposited ZnO thin film with .

Image of FIG. 4.
FIG. 4.

The J-V and I-V characteristics obtained from the ZnO Schottky diodes.

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/content/aip/journal/apl/98/14/10.1063/1.3574933
2011-04-06
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Ohmic contact between ZnO and Pt by InSb layer in a ZnO Schottky diode
http://aip.metastore.ingenta.com/content/aip/journal/apl/98/14/10.1063/1.3574933
10.1063/1.3574933
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