Full text loading...
Generated (100)semiconductor/oxide interface models.
Distributions of calculated bond-lengths at/near the semiconductor/oxide interfaces, for (a) Ge/oxide, (b) InAs/oxide, and (c) GaAs/oxide interfaces. The dashed lines correspond to the computed bond-lengths in the bulk semiconductor phase.
Ratio between the interface defect density and the surface atom density as a function of the calculated relative interface stress [with respect to the interface], at various (100)semiconductor/oxide interfaces.
Fractions of O atom coordination and oxidation states of the group III, IV, and V elements at the (100)semiconductor/oxide interface models.
Article metrics loading...