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Universal stress-defect correlation at (100)semiconductor/oxide interfaces
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10.1063/1.3575559
/content/aip/journal/apl/98/14/10.1063/1.3575559
http://aip.metastore.ingenta.com/content/aip/journal/apl/98/14/10.1063/1.3575559

Figures

Image of FIG. 1.
FIG. 1.

Generated (100)semiconductor/oxide interface models.

Image of FIG. 2.
FIG. 2.

Distributions of calculated bond-lengths at/near the semiconductor/oxide interfaces, for (a) Ge/oxide, (b) InAs/oxide, and (c) GaAs/oxide interfaces. The dashed lines correspond to the computed bond-lengths in the bulk semiconductor phase.

Image of FIG. 3.
FIG. 3.

Ratio between the interface defect density and the surface atom density as a function of the calculated relative interface stress [with respect to the interface], at various (100)semiconductor/oxide interfaces.

Tables

Generic image for table
Table I.

Fractions of O atom coordination and oxidation states of the group III, IV, and V elements at the (100)semiconductor/oxide interface models.

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/content/aip/journal/apl/98/14/10.1063/1.3575559
2011-04-04
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Universal stress-defect correlation at (100)semiconductor/oxide interfaces
http://aip.metastore.ingenta.com/content/aip/journal/apl/98/14/10.1063/1.3575559
10.1063/1.3575559
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