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Depth progression of dissociation reaction of the 1.014-eV photoluminescence copper center in copper-diffused silicon crystal measured by deep-level transient spectroscopy
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10.1063/1.3575574
/content/aip/journal/apl/98/14/10.1063/1.3575574
http://aip.metastore.ingenta.com/content/aip/journal/apl/98/14/10.1063/1.3575574
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Change in DLTS spectrum with annealing time for unetched samples. Annealing temperature was . Annealing times and magnifications of the spectra are indicated in figure.

Image of FIG. 2.
FIG. 2.

Change in DLTS spectrum with etched depth in samples annealed at for 8 h. Etched depths and magnifications of spectra are indicated in figure.

Image of FIG. 3.
FIG. 3.

Changes in concentrations of the and centers with etched depth for samples (a) unannealed, (b) annealed for 30 min, (c) annealed for 1 h, and (d) annealed for 8 h. Annealing temperature was . Horizontal dotted line indicates instrumental DL of DLTS measurement.

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/content/aip/journal/apl/98/14/10.1063/1.3575574
2011-04-06
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Depth progression of dissociation reaction of the 1.014-eV photoluminescence copper center in copper-diffused silicon crystal measured by deep-level transient spectroscopy
http://aip.metastore.ingenta.com/content/aip/journal/apl/98/14/10.1063/1.3575574
10.1063/1.3575574
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