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Extreme ultraviolet detection using AlGaN-on-Si inverted Schottky photodiodes
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10.1063/1.3576914
/content/aip/journal/apl/98/14/10.1063/1.3576914
http://aip.metastore.ingenta.com/content/aip/journal/apl/98/14/10.1063/1.3576914
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

AlGaN EUV photodetector structure: conventional (a) and inverted Schottky (b).

Image of FIG. 2.
FIG. 2.

Current-voltage characteristics of the conventional (lighter) and inverted (darker) Schottky photodiodes in darkness (solid line) and under illumination with the wavelength of 280 nm (, dotted line).

Image of FIG. 3.
FIG. 3.

Carrier collection under forward bias in the conventional (a) and inverted Schottky diode (b).

Image of FIG. 4.
FIG. 4.

Average spectral responsivity of the conventional and inverted Schottky photodiodes measured with the Xe lamp (gray) compared to the photocurrent measured using the synchrotron radiation (black). The inset shows the open electrode design.

Image of FIG. 5.
FIG. 5.

AlGaN Schottky photodiode response (gray line) compared with the He discharge relative intensity (black sticks, after Ref. 13).

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/content/aip/journal/apl/98/14/10.1063/1.3576914
2011-04-05
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Extreme ultraviolet detection using AlGaN-on-Si inverted Schottky photodiodes
http://aip.metastore.ingenta.com/content/aip/journal/apl/98/14/10.1063/1.3576914
10.1063/1.3576914
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