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AlGaN EUV photodetector structure: conventional (a) and inverted Schottky (b).
Current-voltage characteristics of the conventional (lighter) and inverted (darker) Schottky photodiodes in darkness (solid line) and under illumination with the wavelength of 280 nm (, dotted line).
Carrier collection under forward bias in the conventional (a) and inverted Schottky diode (b).
Average spectral responsivity of the conventional and inverted Schottky photodiodes measured with the Xe lamp (gray) compared to the photocurrent measured using the synchrotron radiation (black). The inset shows the open electrode design.
AlGaN Schottky photodiode response (gray line) compared with the He discharge relative intensity (black sticks, after Ref. 13).
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