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Directed self-assembly of InAs quantum dots on nano-oxide templates
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10.1063/1.3579253
/content/aip/journal/apl/98/14/10.1063/1.3579253
http://aip.metastore.ingenta.com/content/aip/journal/apl/98/14/10.1063/1.3579253
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Patterned InAs QDs with a center-to-center spacing of 80 nm corresponding to a dot density of .

Image of FIG. 2.
FIG. 2.

AFM profiles of QDs grown on 150 nm pitch pattern with (a) pore diameter of 70 nm and (b) pore diameter of 90 nm showing the transition from single QDs to QD clusters.

Image of FIG. 3.
FIG. 3.

PL data from patterned and self-assembled QDs showing excitonic peaks (0.977, 1.06, 1.162 eV) and wetting layer emission at 1.27 eV.

Image of FIG. 4.
FIG. 4.

PL from patterned QDs for two pump powers showing increased emission from higher order states due to state filling effects.

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/content/aip/journal/apl/98/14/10.1063/1.3579253
2011-04-08
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Directed self-assembly of InAs quantum dots on nano-oxide templates
http://aip.metastore.ingenta.com/content/aip/journal/apl/98/14/10.1063/1.3579253
10.1063/1.3579253
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