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Patterned InAs QDs with a center-to-center spacing of 80 nm corresponding to a dot density of .
AFM profiles of QDs grown on 150 nm pitch pattern with (a) pore diameter of 70 nm and (b) pore diameter of 90 nm showing the transition from single QDs to QD clusters.
PL data from patterned and self-assembled QDs showing excitonic peaks (0.977, 1.06, 1.162 eV) and wetting layer emission at 1.27 eV.
PL from patterned QDs for two pump powers showing increased emission from higher order states due to state filling effects.
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