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Emission of the terahertz electromagnetic wave from coherent longitudinal optical phonons in a GaAs buffer layer optically masked by a GaSb top epitaxial layer
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10.1063/1.3574541
/content/aip/journal/apl/98/15/10.1063/1.3574541
http://aip.metastore.ingenta.com/content/aip/journal/apl/98/15/10.1063/1.3574541
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Raman scattering spectrum of the GaSb/GaAs structure measured at room temperature.

Image of FIG. 2.
FIG. 2.

Amplitude of the terahertz electromagnetic waveform of the GaSb/GaAs structure as a function of time delay at room temperature. The inset shows the oscillatory profile between 0.5 and 3.0 ps in order to highlight the beat pattern.

Image of FIG. 3.
FIG. 3.

Fourier power spectrum of the terahertz waveform shown in Fig. 2.

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/content/aip/journal/apl/98/15/10.1063/1.3574541
2011-04-13
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Emission of the terahertz electromagnetic wave from coherent longitudinal optical phonons in a GaAs buffer layer optically masked by a GaSb top epitaxial layer
http://aip.metastore.ingenta.com/content/aip/journal/apl/98/15/10.1063/1.3574541
10.1063/1.3574541
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