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Defect-reduced green GaInN/GaN light-emitting diode on nanopatterned sapphire
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10.1063/1.3579255
/content/aip/journal/apl/98/15/10.1063/1.3579255
http://aip.metastore.ingenta.com/content/aip/journal/apl/98/15/10.1063/1.3579255
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Figures

Image of FIG. 1.
FIG. 1.

Cross-section TEM of the epitaxial GaN/sapphire interface on (a) planar and (b) nanopatterned sapphire. Schematics showing early (c) and late (d) phases of the TD (T1, T2, T3) formation on the nanopatterned substrate.

Image of FIG. 2.
FIG. 2.

(a) IQE as a function of excitation power density, (b) EQE as a function of current density for the nanopatterned substrate (circles) and the reference (squares) LED.

Image of FIG. 3.
FIG. 3.

(a) Measured (solid) EL and Lambertian emission patterns (dashed) of nanopatterned and reference LED. Inset shows the geometry. Measured (dots) and simulated (line) interference fringes for the nanopatterned substrate (b) and reference (c) LEDs; (d) simulated LEE enhancement as function of scattering coefficient .

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/content/aip/journal/apl/98/15/10.1063/1.3579255
2011-04-11
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Defect-reduced green GaInN/GaN light-emitting diode on nanopatterned sapphire
http://aip.metastore.ingenta.com/content/aip/journal/apl/98/15/10.1063/1.3579255
10.1063/1.3579255
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