No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
The full text of this article is not currently available.
Defect-reduced green GaInN/GaN light-emitting diode on nanopatterned sapphire
2.C. Wetzel, M. Zhu, Y. Li, W. Hou, L. Zhao, W. Zhao, S. You, C. Stark, Y. Xia, M. DiBiccari, and T. Detchprohm, Proc. SPIE 7422, 742204 (2009).
3.S. Nakamura, S. Pearton, and G. Fasol, The Blue Laser Diode: The Complete Story, 2nd ed. (Springer, Berlin, 2000).
6.Y. J. Lee, J. M. Hwang, T. C. Hsu, M. H. Hsieh, M. J. Jou, B. J. Lee, T. C. Lu, H. C. Kuo, and S. C. Wang, IEEE Photonics Technol. Lett. 18, 1152 (2006).
8.H. W. Huang, C. H. Lin, J. K. Huang, K. Y. Lee, C. F. Lin, C. C. Yu, J. Y. Tsai, R. Hsueh, H. C. Kuo, and S. C. Wang, Mater. Sci. Eng., B 164, 76 (2009).
9.C. H. Chiu, H. H. Yen, C. L. Chao, Z. Y. Li, P. Yu, H. C. Kuo, T. C. Lu, S. C. Wang, K. M. Lau, and S. J. Cheng, Appl. Phys. Lett. 93, 081108 (2008).
10.M. Tohno, T. Okimoto, Y. Naoi, K. Nishino, S. Sakai, T. Kusuura, A. Mitra, S. Nouda, M. Kimura, S. Kawano, and Y. Muramoto, Proceedings of First International Conference on White Light-Emitting Diodes and Solid State Lighting (The Illumination Engineering Institute of Japan, Tokyo, 2007), p. 370.
11.T. Detchprohm, M. Zhu, Y. Li, Y. Xia, C. Wetzel, E. A. Preble, L. Liu, T. Paskova, and D. Hanser, Appl. Phys. Lett. 92, 241109 (2008).
12.D. Fuhrmann, T. Retzlaff, U. Rossow, and A. Hangleiter, GaN, AlN, InN, and Their Alloys, edited by C. Wetzel, B. Gil, M. Kuzuhara, and M. Manfra, MRS Symposia Proceedings No. 831 (Materials Research Society, Pittsburgh, 2005), p. 323–328.
Article metrics loading...
Green GaInN/GaN quantum welllight-emitting diode(LED) wafers were grown on nanopatterned -plane sapphire substrate by metal-organic vapor phase epitaxy. Without roughening the chip surface, such LEDs show triple the light output over structures on planar sapphire. By quantitative analysis the enhancement was attributed to both, enhanced generation efficiency and extraction. The spectral interference and emission patterns reveal a 58% enhanced light extraction while photoluminescence reveals a doubling of the internal quantum efficiency. The latter was attributed to a 44% lower threading dislocation density as observed in transmission electron microscopy. The partial light output power measured from the sapphire side of the unencapsulated nanopatterned substrate LED die reaches 5.2 mW at 525 nm at 100 mA compared to 1.8 mW in the reference LED.
Full text loading...
Most read this month