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Efficient nonradiative energy transfer from InGaN/GaN nanopillars to CdSe/ZnS core/shell nanocrystals
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See supplementary material at http://dx.doi.org/10.1063/1.3562035
for the design, fabrication, and characterization of InGaN/GaN multiple quantum well NP arrays; for Fig. S1 schematic representation of the NP formation, scanning electron microscopy image of the fabricated InGaN/GaN multiple quantum well NPs, and their x-ray diffraction measurement; for Fig. S2 photoluminescence spectra of both planar and nanopillar structures of InGaN/GaN multiple quantum wells, and absorption and emission spectra of CdSe/ZnS core/shell nanocrystal quantum dots; for additional information on NQDs and time-correlated single photon counting (TPSPC) system for PicoHarp 300; for Eq. (S1) fitting only NP sample with a single exponential decay; for Eq. (S2) fitting nanopillars and nanocrystal quantum dots together, for Eq. (S3) giving the spectral overlap J; for Eq. (S4) exhibiting ET efficiency; for Eqs. (S5)–(S7) showing the derivation of the ET rate from multiple quantum well NPs to NQDs; and for Figs. S3 and S4 presenting the time-resolved spectroscopy of multiple quantum well NPs with yellow- and green-emitting NQDs, respectively; Table S1 including parameter values used to calculate ET rate for different samples.[Supplementary Material]
18.J. -H. Zhu, S. -M. Zhang, X. Sun, D. -G. Zhao, J. -J. Zhu, Z. -S. Liu, D. -S. Jiang, L. -H. Duan, H. Wang, Y. -S. Shi, S. -Y. Liu, and H. Yang, Chin. Phys. Lett. 25, 3485 (2008).
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