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Indirect Auger recombination as a cause of efficiency droop in nitride light-emitting diodes
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/content/aip/journal/apl/98/16/10.1063/1.3570656
2011-04-19
2015-04-28

Abstract

InGaN-based light-emitting diodes(LEDs) exhibit a significant efficiency loss (droop) when operating at high injected carrier densities, the origin of which remains an open issue. Using atomistic first-principles calculations, we show that this efficiency droop is caused by indirect Auger recombination, mediated by electron-phonon coupling and alloy scattering. By identifying the origin of the droop, our results provide a guide to addressing the efficiency issues in nitride LEDs and the development of efficient solid-state lighting.

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Scitation: Indirect Auger recombination as a cause of efficiency droop in nitride light-emitting diodes
http://aip.metastore.ingenta.com/content/aip/journal/apl/98/16/10.1063/1.3570656
10.1063/1.3570656
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