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(a) Schematic diagram of the direct AR process. (b) In the indirect Auger case, the recombination process is assisted by a scattering mechanism, such as the electron-phonon coupling, alloy disorder, or Coulomb scattering by charged defects.
(a) The contributions of phonon- and alloy-assisted electron-electron-hole (e–e–h) and hole-hole-electron (h–h–e) processes to the Auger coefficient of InGaN as a function of the band gap of the active-layer material. (b) LED internal quantum efficiency as a function of carrier density for varying InGaN alloy composition.
The calculated alloy-assisted Auger coefficients for the electron-electron-hole (e–e–h) and hole-hole-electron (h–h–e) processes. The lines are fits to the data.
[(a) and (b)] Phonon-assisted Auger coefficient for GaN and InGaN as a function of the band gap and lattice temperature, for (a) the electron-electron-hole (e–e–h) and (b) hole-hole-electron (h–h–e) processes. [(c) and (d)] Contribution of the various phonon modes [LO (squares), acoustic (diamonds), and other optical (triangles)] to the (c) e–e–h and (d) h–h–e phonon-assisted Auger processes at 300 K.
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