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Semiconductor-metal transition in thin films grown by ozone based atomic layer deposition
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View: Figures


Image of FIG. 1.
FIG. 1.

ALD characteristics for the process TEMAV— at : (a) Growth per cycle vs exposure times for TEMAV with a fixed exposure of 5 s (filled symbols) and for with a fixed TEMAV exposure of 2 s (open symbols); (b) Thickness of the deposited films as a function of the number of ALD cycles.

Image of FIG. 2.
FIG. 2.

XPS of (a) an as deposited -grown ALD film, and (b) a film grown by an -plasma enhanced ALD process with long plasma exposure.

Image of FIG. 3.
FIG. 3.

XRD spectra of an -grown ALD films, the same film annealed for 30 min in He at and a film grown by an -plasma enhanced ALD process with long plasma exposure. In the inset, a SEM picture is shown for the annealed -grown ALD film.

Image of FIG. 4.
FIG. 4.

Integrated intensity for the diffraction peak of the 110 plane during an isothermal anneal of 30 min at in He for a film of 42 nm. The inset shows the in situ XRD measurement from which the peak intensity was integrated.

Image of FIG. 5.
FIG. 5.

SMT as observed during a thermal cycle between 30 and , with fixed heating and cooling rate of : (a) in situ XRD, showing the change in crystal structure, (b) the correlated change in resistivity, and (c) a Gaussian curve fit to for the analysis of the resistivity.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Semiconductor-metal transition in thin VO2 films grown by ozone based atomic layer deposition