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ALD characteristics for the process TEMAV— at : (a) Growth per cycle vs exposure times for TEMAV with a fixed exposure of 5 s (filled symbols) and for with a fixed TEMAV exposure of 2 s (open symbols); (b) Thickness of the deposited films as a function of the number of ALD cycles.
XPS of (a) an as deposited -grown ALD film, and (b) a film grown by an -plasma enhanced ALD process with long plasma exposure.
XRD spectra of an -grown ALD films, the same film annealed for 30 min in He at and a film grown by an -plasma enhanced ALD process with long plasma exposure. In the inset, a SEM picture is shown for the annealed -grown ALD film.
Integrated intensity for the diffraction peak of the 110 plane during an isothermal anneal of 30 min at in He for a film of 42 nm. The inset shows the in situ XRD measurement from which the peak intensity was integrated.
SMT as observed during a thermal cycle between 30 and , with fixed heating and cooling rate of : (a) in situ XRD, showing the change in crystal structure, (b) the correlated change in resistivity, and (c) a Gaussian curve fit to for the analysis of the resistivity.
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