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Mask undercut in deep silicon etch
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10.1063/1.3579542
/content/aip/journal/apl/98/16/10.1063/1.3579542
http://aip.metastore.ingenta.com/content/aip/journal/apl/98/16/10.1063/1.3579542
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

SEMs of silicon etch profiles at the top of a trench after either (a) 15 etch cycles {2 min. total time}, (b) 150 etch cycles {20 min}, or (c) 300 etch cycles {40 min}.

Image of FIG. 2.
FIG. 2.

SEM of FCF deposit over an undercut feature. Standard deposition conditions were used except for a 0 W bias.

Image of FIG. 3.
FIG. 3.

SEMs of FCF deposit over an undercut feature. Standard deposition conditions were used except for a 10 W bias. (a) is at the top (b) is at the bottom of a 64 um deep 10 um wide (nominal) trench.

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/content/aip/journal/apl/98/16/10.1063/1.3579542
2011-04-19
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Mask undercut in deep silicon etch
http://aip.metastore.ingenta.com/content/aip/journal/apl/98/16/10.1063/1.3579542
10.1063/1.3579542
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