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(a) Sketch of the hybrid device, showing schematically the NRET from NQDs to Si. Thickness of is presented for three situations: (no oxide, NQDs grafted on Si), and (NQDs are grafted on pure glass) and (b) PL and absorption spectra of NQDs (dashed and solid lines) and absorption spectrum of Si (monotonous curve plotted against right axis).
AFM images of submonolayers of NQDs grafted on (panel a) and pure Si (panel b), same for dense layers on panels (c) and (d). PL dynamics at various spectral positions within the imhomogeniously broadened spectrum for sublayer (e) and dense layer (f) on .
(a) PL dynamics of dense NQD layers deposited on different substrates; (b) calculations of the total width , with NRET included for various values of (dashed line for , solid lines are in the increasing order for ). Solid dots show experimental values for (dot A) and for (dot B). Inset: variation in purely radiative lifetimes as a function of the thickness of the layer above Si surface.
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