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XRD measurement of 200 nm Ge film on GaAs substrate. The fringes on both sides imply a sharp Ge/GaAs interface.
Cross-sectional TEM image of Ge on GaAs. A few misfit dislocations are seen at the interface but no threading dislocation is detected. The inset is the high resolution TEM.
Room temperature PL infrared emission from the structure of 200 nm Ge film on GaAs substrate. The direct band gap emission occurs at 1550 nm with energy of 0.8 eV. The ECV data shows that the Ge film is n-type, and the donor concentration is about .
XPS spectra of (1) core level and VBM of GaAs film, (2) core level and core level at Ge/GaAs interface, and (3) core level and VBM of Ge film.
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