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High quality Ge thin film grown by ultrahigh vacuum chemical vapor deposition on GaAs substrate
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10.1063/1.3580605
/content/aip/journal/apl/98/16/10.1063/1.3580605
http://aip.metastore.ingenta.com/content/aip/journal/apl/98/16/10.1063/1.3580605
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

XRD measurement of 200 nm Ge film on GaAs substrate. The fringes on both sides imply a sharp Ge/GaAs interface.

Image of FIG. 2.
FIG. 2.

Cross-sectional TEM image of Ge on GaAs. A few misfit dislocations are seen at the interface but no threading dislocation is detected. The inset is the high resolution TEM.

Image of FIG. 3.
FIG. 3.

Room temperature PL infrared emission from the structure of 200 nm Ge film on GaAs substrate. The direct band gap emission occurs at 1550 nm with energy of 0.8 eV. The ECV data shows that the Ge film is n-type, and the donor concentration is about .

Image of FIG. 4.
FIG. 4.

XPS spectra of (1) core level and VBM of GaAs film, (2) core level and core level at Ge/GaAs interface, and (3) core level and VBM of Ge film.

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/content/aip/journal/apl/98/16/10.1063/1.3580605
2011-04-19
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: High quality Ge thin film grown by ultrahigh vacuum chemical vapor deposition on GaAs substrate
http://aip.metastore.ingenta.com/content/aip/journal/apl/98/16/10.1063/1.3580605
10.1063/1.3580605
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