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Near 1 V open circuit voltage InAs/GaAs quantum dot solar cells
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10.1063/1.3580765
/content/aip/journal/apl/98/16/10.1063/1.3580765
http://aip.metastore.ingenta.com/content/aip/journal/apl/98/16/10.1063/1.3580765
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

HRXRD of 1.8 ML QDSCs using both GaP and GaAsP strain balancing layers and an AFM image of the 1.8 ML coverage value test structure.

Image of FIG. 2.
FIG. 2.

AM0 illuminated 1 sun characteristics of control GaAs solar cell and QDSCs with 2.1 ML InAs and GaP SB layer and 1.8 ML InAs coverage with both GaP and GaAsP SB layer.

Image of FIG. 3.
FIG. 3.

EQE of control GaAs solar cell and QDSCs with 2.1 ML InAs and GaP SB layer and 1.8 ML InAs coverage with both GaP and GaAsP SB layer, showing bulk GaAs responsivity and sub-GaAs bandgap absorption.

Image of FIG. 4.
FIG. 4.

Scaled spectral responsivity and EL spectra of QDSCs with 2.1 ML InAs and GaP SB layer and 1.8 ML InAs coverage with both GaP and GaAsP SB layer, sub-GaAs bandgap absorption fine structure and emission detail.

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/content/aip/journal/apl/98/16/10.1063/1.3580765
2011-04-18
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Near 1 V open circuit voltage InAs/GaAs quantum dot solar cells
http://aip.metastore.ingenta.com/content/aip/journal/apl/98/16/10.1063/1.3580765
10.1063/1.3580765
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