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(a) SEM image of the W probe [as the anode of FE-nanodiode (FE-ND)] and SiNW thin-film (as the cold cathode of FE-ND). (b) SEM image and (b) TEM image of SiNWs on the silicon wafer. The inset in (c) is the x-ray photoemission spectroscopy analysis of SiNWs, indicating that the nanowires are composed of crystallized silicon.
(a) Emission current-voltage curves for SiNWs with anode-to-cathode separation (nanogap size) varying from 20 to 150 nm, and (b) the corresponding FN plots.
(a) Dependencies of the onset voltage and the field enhancement factor on the nanogap size. (b) 2D scanning FE measurement with a fixed gap height and a fixed applied voltage . The step size of probe in the plane is and points were measured.
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