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Nanomanipulation of field emission measurement for vacuum nanodiodes based on uniform silicon nanowire emitters
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10.1063/1.3581036
/content/aip/journal/apl/98/16/10.1063/1.3581036
http://aip.metastore.ingenta.com/content/aip/journal/apl/98/16/10.1063/1.3581036
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Figures

Image of FIG. 1.
FIG. 1.

(a) SEM image of the W probe [as the anode of FE-nanodiode (FE-ND)] and SiNW thin-film (as the cold cathode of FE-ND). (b) SEM image and (b) TEM image of SiNWs on the silicon wafer. The inset in (c) is the x-ray photoemission spectroscopy analysis of SiNWs, indicating that the nanowires are composed of crystallized silicon.

Image of FIG. 2.
FIG. 2.

(a) Emission current-voltage curves for SiNWs with anode-to-cathode separation (nanogap size) varying from 20 to 150 nm, and (b) the corresponding FN plots.

Image of FIG. 3.
FIG. 3.

(a) Dependencies of the onset voltage and the field enhancement factor on the nanogap size. (b) 2D scanning FE measurement with a fixed gap height and a fixed applied voltage . The step size of probe in the plane is and points were measured.

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/content/aip/journal/apl/98/16/10.1063/1.3581036
2011-04-19
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Nanomanipulation of field emission measurement for vacuum nanodiodes based on uniform silicon nanowire emitters
http://aip.metastore.ingenta.com/content/aip/journal/apl/98/16/10.1063/1.3581036
10.1063/1.3581036
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