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Effect of dislocation density on thermal boundary conductance across GaSb/GaAs interfaces
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10.1063/1.3581041
/content/aip/journal/apl/98/16/10.1063/1.3581041
http://aip.metastore.ingenta.com/content/aip/journal/apl/98/16/10.1063/1.3581041
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

AFM images of the GaSb film surface for the non-IMF [(a) and (b)] and IMF [(c) and (d)] samples.

Image of FIG. 2.
FIG. 2.

Thermal boundary conductances at the two different Al/GaSb and GaSb/GaAs interfaces studied in this work along with previously measured data at TiN/MgO(111),22 Cr/Si,23 and Bi/H-diamond (Ref. 24) interfaces. DMM calculations are shown for the Al/GaSb and GaSb/GaAs interfaces, which drastically overpredict the measured data since the traditional formulation of the DMM does not account for dislocations or roughness around interfaces.

Image of FIG. 3.
FIG. 3.

Measured thermal boundary conductances of the Al/GaSb and GaSb/GaAs interfaces along with predictions of the traditional DMM and the DMM accounting for additional phonon attenuation around the interface.

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/content/aip/journal/apl/98/16/10.1063/1.3581041
2011-04-22
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Effect of dislocation density on thermal boundary conductance across GaSb/GaAs interfaces
http://aip.metastore.ingenta.com/content/aip/journal/apl/98/16/10.1063/1.3581041
10.1063/1.3581041
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