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Hall effect-induced acceleration of electromigration failures in spin valve multilayers under magnetic field
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10.1063/1.3581042
/content/aip/journal/apl/98/16/10.1063/1.3581042
http://aip.metastore.ingenta.com/content/aip/journal/apl/98/16/10.1063/1.3581042
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

The dependence of applied and on the EM-induced failure characteristics of SV-ML devices electrically stressed by a current density of . (a) electrical resistance change vs time (t) curves at the different , (b) cumulative percent vs TTF curves at the different , (c) vs t curves at the different (different duty factors), and (d) cumulative percent vs TTF curves at the different .

Image of FIG. 2.
FIG. 2.

Schematic illustrations of electrons’ motion in the SV-ML devices under (a) electrical field ( or ) and no magnetic field , and (b) electrical field ( or ) and magnetic field .

Image of FIG. 3.
FIG. 3.

(a) Temperature distribution profiles, and (b) Cu atomic flux into the bottom Co layer in the SV-ML devices electrically stressed by a current density of under or no magnetic field including with different duty factors.

Image of FIG. 4.
FIG. 4.

HR-TEM images for the SV-ML devices (a) before applying electrical stress, (b) after complete failure under the applied current density of and no magnetic field (99% of TTF), and (c) after failure under the both applied current density and a 600 Oe of magnetic field (99% of TTF).

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/content/aip/journal/apl/98/16/10.1063/1.3581042
2011-04-19
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Hall effect-induced acceleration of electromigration failures in spin valve multilayers under magnetic field
http://aip.metastore.ingenta.com/content/aip/journal/apl/98/16/10.1063/1.3581042
10.1063/1.3581042
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