1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Comparison of the interfacial and electrical properties of HfAlO films on Ge with S and passivation
Rent:
Rent this article for
USD
10.1063/1.3581051
/content/aip/journal/apl/98/16/10.1063/1.3581051
http://aip.metastore.ingenta.com/content/aip/journal/apl/98/16/10.1063/1.3581051
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

XPS spectra of Ge in the as-deposited and annealed HfAlO films (a) with S passivation and (b) with passivation.

Image of FIG. 2.
FIG. 2.

The TEM images of the annealed HfAlO films with (a) with S passivation and (b) passivation.

Image of FIG. 3.
FIG. 3.

characteristics the as-deposited and annealed HfAlO films of (a) with S passivation, (b) with passivation. The insets show curves of the two annealed samples measured at 100 kHz, 500 kHz, and 1 MHz.

Image of FIG. 4.
FIG. 4.

characteristics of the as-deposited and annealed HfAlO films with S and passivation.

Loading

Article metrics loading...

/content/aip/journal/apl/98/16/10.1063/1.3581051
2011-04-19
2014-04-24
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Comparison of the interfacial and electrical properties of HfAlO films on Ge with S and GeO2 passivation
http://aip.metastore.ingenta.com/content/aip/journal/apl/98/16/10.1063/1.3581051
10.1063/1.3581051
SEARCH_EXPAND_ITEM