No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Surface-plasmon-enhanced band-edge emission from Au/GaN powders
1.S. Adachi, Handbook on Physical Properties of Semiconductors (Kluwer, Dordrecht, 2004).
5.M. Liu, S. W. Qu, W. W. Yu, S. Y. Bao, C. Y. Ma, Q. Y. Zhang, J. He, J. C. Jiang, E. I. Meletis, and C. L. Chen, Appl. Phys. Lett. 97, 231906 (2010).
7.This smaller value of activation energy for GaN nanopowder may arise from the existence of a large number of defects in the nanopowder compared to the defects in Ga-rich-GaN film. Because the activation energy corresponds to the escape of carriers to nonradiative centers at other defect sites, the increase in the defects results in the reduction in activation energy as well as the PL efficiency (see Ref. 3). In fact, GaN nanopowder has both the smaller activation energy and PL efficiency than those of the Ga-rich-GaN film.
11.Z. Chen, D. -C. Lu, X. Liu, X. Wang, P. Han, D. W. H. Yuan, Z. Wang, G. Li, and Z. Fang, J. Appl. Phys. 93, 316 (2003).
13.S. J. Xu, in III-Nitride Semiconductors: Optical Properties II, edited by M. O. Manasreh and H. X. Jiang (Taylor & Francis, New York, 2002), p. 339.
14.I. A. Buyanova, J. P. Bergman, B. Monemar, H. Amano, I. Akasaki, A. Wysmolek, P. Lomiak, J. M. Baranowski, K. Pakula, R. Stepniewski, K. P. Korona, I. Grzegor, M. Bockowski, and S. Porowski, Solid State Commun. 105, 497 (1998).
Article metrics loading...
Full text loading...
Most read this month