Full text loading...
(a) SEM image of ZnO nanowire and (b) the structure of SP-ZnO under illumination with UV or visible light.
Fluorescence microscopy images of SP-ZnO nanowires in array (top view) with 530–580 nm as excitation source. UV light (330–380nm) for 10 s to (a), (c), (e), and (g) or visible light (530–580nm) for 20 s to (b), (d), (f), and (h) were used to trigger the change in structure of SP-ZnO before collecting the fluorescence image (i) the fluorescence intensity of scanning along white line of (a)–(b). (j) The integrated fluorescence intensity of (e) sample over the fluorescence microscopy image versus alternate UV and visible irradiation.
Bright field image of SP-ZnO nanowire (a), fluorescence microscopy images of an individual SP-ZnO nanowire with 530–580 nm as excitation source. UV 330–380 nm for 10 s to (b), (d) and visible light 530–580 nm for 20 s to (c), (e) were used to trigger the change in structure of SP-ZnO before collecting the fluorescence image. (f) The fluorescence intensity of scanning along white line from “a” to “b” of (b)–(e).
(a) The fluorescence intensity of SP-ZnO under different input and initial state (IS). A and B states correspond to 0 and 1, respectively. Dashed line shows the threshold value. (b) Truth table and (c) logic symbol of RS flip-flop.
Article metrics loading...