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Improved tunneling magnetoresistance at low temperature in manganite junctions grown by molecular beam epitaxy
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10.1063/1.3581885
/content/aip/journal/apl/98/16/10.1063/1.3581885
http://aip.metastore.ingenta.com/content/aip/journal/apl/98/16/10.1063/1.3581885
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) Optical image of the MTJ. The arrows indicate the current flow while the junction area is indicated by the dashed rectangle. (b) The inset shows a cross section of the stacking sequence of the MTJ.

Image of FIG. 2.
FIG. 2.

Maximum TMR ratio vs. temperature for , . The inset shows two sweeps measured at 4 K for the same field conditions after different cooling cycles.

Image of FIG. 3.
FIG. 3.

Polar plot of the maximum TMR ratio (at ) vs field direction for field-cooling at (dashed arrow). Crystalline axis are indicated by solid arrows; junction orientation is indicated by rectangle.

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/content/aip/journal/apl/98/16/10.1063/1.3581885
2011-04-20
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Improved tunneling magnetoresistance at low temperature in manganite junctions grown by molecular beam epitaxy
http://aip.metastore.ingenta.com/content/aip/journal/apl/98/16/10.1063/1.3581885
10.1063/1.3581885
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