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Optical waveguide loss minimized into gallium nitride based structures grown by metal organic vapor phase epitaxy
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10.1063/1.3582055
/content/aip/journal/apl/98/16/10.1063/1.3582055
http://aip.metastore.ingenta.com/content/aip/journal/apl/98/16/10.1063/1.3582055
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Schematic depicting the sample structure (a) and in situ monitored laser reflectance signal arising from the surface during the growth of the sample (b).

Image of FIG. 2.
FIG. 2.

Weak beam TEM cross-sectional image of the GaN based waveguide sample showing the TDs.

Image of FIG. 3.
FIG. 3.

Dispersion of the refractive index in GaN optical waveguide structure deposited on sapphire substrate (for TE and TM polarizations) and guided mode spectrum in inset.

Image of FIG. 4.
FIG. 4.

Evolution of the propagation losses in GaN planar waveguide structure as a function of wavelength (TE polarization).

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/content/aip/journal/apl/98/16/10.1063/1.3582055
2011-04-19
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Optical waveguide loss minimized into gallium nitride based structures grown by metal organic vapor phase epitaxy
http://aip.metastore.ingenta.com/content/aip/journal/apl/98/16/10.1063/1.3582055
10.1063/1.3582055
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