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Schematic depicting the sample structure (a) and in situ monitored laser reflectance signal arising from the surface during the growth of the sample (b).
Weak beam TEM cross-sectional image of the GaN based waveguide sample showing the TDs.
Dispersion of the refractive index in GaN optical waveguide structure deposited on sapphire substrate (for TE and TM polarizations) and guided mode spectrum in inset.
Evolution of the propagation losses in GaN planar waveguide structure as a function of wavelength (TE polarization).
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