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Using patterned H-resist for controlled three-dimensional growth of nanostructures
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View: Figures


Image of FIG. 1.
FIG. 1.

STM images showing the starting H:Si(100) surface, patterning by STM H-depassivation to form the nominally square, and the same patterned region after 5, 10, 15, 20, and 25 lithography-deposition cycles. Imaging conditions were −2.2 V and 0.1 nA. The line profiles (offset vertically) on the left are taken along line-scans over the same line in each image indicated by the arrow.

Image of FIG. 2.
FIG. 2.

Graphs of deposition thickness against the number of lithography-deposition cycles for the (black, open circles) and the (red, solid circles) patterned regions.

Image of FIG. 3.
FIG. 3.

Representative height profiles (offset vertically) and 3D orthogonal relief representation of the pregrown nanostructure, and second nanostructure growing in the patterned region. Imaging conditions were −2.2 V and 0.1 nA. Arrows indicate line profile positions taken in a direction orthogonal to that of the line profiles in Fig. 1. Here, the different slopes of the side walls are attributable to asymmetry in the tip shape.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Using patterned H-resist for controlled three-dimensional growth of nanostructures