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High-performance gate-all-around polycrystalline silicon nanowire with silicon nanocrystals nonvolatile memory
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10.1063/1.3582925
/content/aip/journal/apl/98/16/10.1063/1.3582925
http://aip.metastore.ingenta.com/content/aip/journal/apl/98/16/10.1063/1.3582925
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

GAA poly-Si NWs NVM device, showing magnified NW, thickness of each layer, and Si NCs.

Image of FIG. 2.
FIG. 2.

(a) TEM image of one NW of the GAA poly-Si NWs NVM device with NCs. (b) TEM top view image of the Si-NCs surrounded by . The diameter of the NCs is around 3 to 7 nm.

Image of FIG. 3.
FIG. 3.

Program/erase characteristics of the GAA NCs and GAA SONOS NVM.

Image of FIG. 4.
FIG. 4.

Endurance characteristics of the GAA NCs and GAA SONOS NVMs. The band diagram in erasing condition is embedded in figure.

Image of FIG. 5.
FIG. 5.

Retention characteristics of the GAA NCs and GAA SONOS NVMs.

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/content/aip/journal/apl/98/16/10.1063/1.3582925
2011-04-22
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: High-performance gate-all-around polycrystalline silicon nanowire with silicon nanocrystals nonvolatile memory
http://aip.metastore.ingenta.com/content/aip/journal/apl/98/16/10.1063/1.3582925
10.1063/1.3582925
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